4-1932000-6

The 4-1932000-6 from TE Connectivity AMP Connectors is a high-performance Memory Connectors - Inline Module Sockets engineered for mission-critical memory applications. This precision connector delivers exceptional signal integrity and EMI shielding, making it ideal for 5G infrastructure and edge computing systems where {Connector Style} interfaces require robust performance.Designed with DIMM configuration, this connector ensures optimal alignment and mating force distribution, critical for high-speed DDR5 SDRAM applications requiring >3200MT/s data rates.Featuring 240 contact points, the connector achieves superior current carrying capacity while maintaining impedance control below 5% variation across all channels.When paired with DDR3 SDRAM modules, the connector's patented contact geometry reduces insertion loss by 15% compared to industry standards, particularly beneficial for memory-intensive AI workloads.Compliant with MO-269 specifications, the design incorporates advanced dielectric materials that meet MIL-STD-202H vibration requirements for military-grade reliability.The Through Hole installation method enables either automated pick-and-place assembly or manual soldering, with thermal cycling performance exceeding 1000 cycles at -55 C to +125 C.Integrated Board Lock, Latches provide positive latching security while minimizing PCB footprint, achieving 40% space savings versus conventional DIMM socket designs.With Normal, Standard - Top orientation, the connector supports both standard and reverse board configurations without compromising signal integrity in high-density server backplanes.The Gold plating delivers <5m contact resistance after 5000 mating cycles, outperforming typical tin-plated alternatives in humid environments.Precision-controlled 30.0µin (0.76µm) coating ensures consistent wear characteristics while preventing fretting corrosion in automotive vibration scenarios.