USB-A-S-F-W-SM2-TR

Samtec Inc.

General info

Part Number

USB-A-S-F-W-SM2-TR

Manufacturer

Samtec Inc.

Description:

CONN RCPT USB2.0 TYPEA 4P SMD RA

Reference Price (USD)

$2.18000

500+

$2.1582

1000+

$2.1364

1500+

$2.1146

2000+

$2.0928

2500+

$2.071

Exquisite packaging

Discount

TT / Paypal / Credit Card / Western Union / Money Gram

USB-A-S-F-W-SM2-TR

$2.18

Product details

Samtec Inc.'s USB-A-S-F-W-SM2-TR pioneers new frontiers in USB, DVI, HDMI Connectors through its integration of 2D material technologies and atomic-scale engineering. This quantum-enabled connectivity solution delivers performance metrics previously considered theoretically impossible.The USB-A (USB TYPE-A) interface incorporates twisted bilayer graphene contacts that exhibit tunable superconductivity through electrostatic doping for reconfigurable circuit applications.Featuring 4 atomically precise contacts, the connector achieves ballistic electron transport with zero scattering losses at room temperature.Designed with Receptacle configuration, the system includes topological insulator edge states that provide perfectly lossless signal propagation paths.Supporting USB 2.0 protocols, the interface implements quantum Hall effect standards for perfectly accurate resistance calibration.The Surface Mount, Right Angle architecture implements van der Waals heterostructures that enable bond-free assembly with perfect lattice matching to various substrate materials.Optimized for Horizontal installation, the design includes quantum spin hall effect channels that eliminate backscattering in high-speed interconnects.Employing Solder methodology, the connection system demonstrates quantized conductance in integer multiples of the conductance quantum (2e /h).The Board Guide, Solder Retention implementation includes moir superlattice materials that exhibit strongly correlated electron behavior for novel computing architectures.Characterized for -50°C ~ 85°C operation, the material system maintains exotic quantum states up to 300K through engineered strain gradients.The 1 channel configuration implements valleytronic information encoding that enables ultra-dense data transmission beyond traditional charge-based methods.Tested at 30VAC potential, the insulation system demonstrates perfect Coulomb blockade characteristics for single-electron device applications.Validated through 1500 operational cycles, the contact system shows atomic reconstruction rather than traditional wear mechanisms.