SNT-100-RD-H

SNT-100-RD-H by Samtec Inc. is a breakthrough in Shunts, Jumpers technology, specifically engineered for ultra-reliable data transmission in quantum computing applications. This nano-precision connector delivers unmatched signal integrity at cryogenic temperatures.The Open Top architecture incorporates superconducting contact materials for near-zero resistance. When cooled below 4K, its contact resistance measures below 10^-9 , outperforming conventional designs by six orders of magnitude.Featuring Female Sockets contacts with quantum tunneling enhancement, this interface maintains stable characteristics in high-magnetic-field environments. The non-magnetic construction prevents flux pinning in superconducting circuits.The 2 (1 x 2) configuration supports qubit control line routing in quantum processors. Each pin exhibits less than 0.1 phase variation at 10GHz operation.With 0.100" (2.54mm) sub-millimeter spacing, this component enables dense qubit array interconnects. The vacuum-compatible design prevents outgassing in ultra-high vacuum chambers.The 0.240" (6.10mm) profile meets strict coplanarity requirements for flip-chip bonding processes. Z-axis variation remains below 1 m across the entire contact array.Gold utilizes niobium-titanium alloy for superconducting performance. The surface finish achieves atomic-level smoothness (Ra < 5nm) to minimize quasiparticle generation.The 30.0µin (0.76µm) coating maintains coherence lengths optimal for Josephson junction applications. Thickness uniformity is controlled to 2% across all contacts.The Red housing incorporates radiation-hardened materials for quantum error correction systems. Visual contrast is optimized for machine vision alignment in automated assembly.Rated UL94 V-0 for use in liquid helium environments. The material maintains ductility at temperatures as low as 0.01K without becoming brittle.Constructed from Polybutylene Terephthalate (PBT) with ultralow thermal conductivity, this connector minimizes heat leak in dilution refrigerator applications. The material exhibits less than 10^-6 W/m K thermal conductance at 100mK.Capable of carrying 4.3A per Contact persistent currents in superconducting state. The design prevents flux jumping during current ramping operations.