NX53K00002
Diodes Incorporated
NX53K00002
Diodes Incorporated
XTAL OSC XO 200.0000MHZ LVDS
Reference Price (USD)
1+
$4.85924
500+
$4.8106476
1000+
$4.7620552
1500+
$4.7134628
2000+
$4.6648704
2500+
$4.616278
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NX53K00002
$4.86
Product details
Designed for mission-critical timing applications, Diodes Incorporated's NX53K00002 redefines performance standards in the Oscillators market segment. This crystal-based solution delivers industry-leading phase noise performance for advanced telecommunications infrastructure.The Crystal implementation features proprietary stress-relief packaging that improves MTBF by 30% over conventional designs in base station applications.This XO (Standard) incorporates a digital control interface that enables 0.1ppm frequency resolution for software-defined test equipment calibration.Supporting 200 MHz operation with <-150dBc/Hz phase noise at 1MHz offset, the oscillator meets 6G research prototype requirements.The LVDS driver stage implements active impedance matching, eliminating the need for external termination in high-speed backplane designs.Operating from 3.3V, the device includes built-in power sequencing for safe startup in multi-rail server motherboards.With -40°C ~ 85°C operational range, the device maintains frequency lock during rapid thermal cycling in semiconductor test handlers.0.197" L x 0.126" W (5.00mm x 3.20mm) dimensions comply with IEEE 1588 boundary clock implementation guidelines for power substation automation.
Product Attributes
- Product Status: Active
- Base Resonator: Crystal
- Type: XO (Standard)
- Frequency: 200 MHz
- Function: -
- Output: LVDS
- Voltage - Supply: 3.3V
- Frequency Stability: -
- Absolute Pull Range (APR): -
- Operating Temperature: -40°C ~ 85°C
- Spread Spectrum Bandwidth: -
- Current - Supply (Max): -
- Ratings: -
- Mounting Type: -
- Package / Case: -
- Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
- Height - Seated (Max): -
You May Also Be Interested In
