MM912G634DV1AE

NXP USA Inc.'s MM912G634DV1AE reimagines Embedded - Microcontrollers - Application Specific for smart grid and power conversion applications. This application-specific microcontroller integrates advanced PWM generation with high-resolution ADC capabilities, enabling precise control of power electronics.Optimized for Automotive implementations, the device features hardware-based overcurrent protection with 50ns response time. The integrated sigma-delta modulators enable direct sensorless motor control.The S12 core includes dedicated trigonometric acceleration units. The parallel execution pipelines achieve 95% duty cycle accuracy at 100kHz switching frequencies.Supporting FLASH (48kB) options, the flash memory incorporates shadow registers for bumpless firmware updates. The dual-plane architecture allows live updates during continuous operation.As a member of the HCS12 family, this device shares power library functions with related products. The consistent API simplifies migration between power stages.The 2K x 8 memory implements deterministic access timing for control loops. The dual-port architecture allows simultaneous access from CPU and PWM units.With LIN, SCI connectivity, the device supports EtherCAT POWERLINK protocols. Each communication peripheral includes reinforced isolation meeting IEC 61800-5-1 standards.The 9 configurable ports feature 12-bit DAC outputs for analog control. Programmable dead-time insertion prevents shoot-through in bridge configurations.Operating from 2.25V ~ 5.5V inputs, the power architecture withstands 100V transients. The integrated gate drivers support SiC and GaN power devices.Certified for -40°C ~ 105°C operation, the package uses direct-bonded copper substrates. Thermal impedance is minimized for high-current applications.The Surface Mount option supports press-fit assembly for high-power PCBs. The package design accommodates thick copper layers for heat dissipation.Available in 48-LQFP Exposed Pad format, the package includes Kelvin sense connections. The low-inductance design minimizes switching losses at high di/dt rates.Supplied in 48-HLQFP (7x7) configuration, each unit includes power cycling test reports. Production testing includes 100% burn-in at maximum junction temperature.