HSEC8-130-01-S-DV-K-TR

Samtec Inc.

General info

Part Number

Manufacturer

Samtec Inc.

Description:

CONN EDGE DUAL FMALE 60POS 0.031

Datasheet:

HSEC8-130-01-S-DV-K-TR PDF

Reference Price (USD)

$7.48000

500+

$7.4052

1000+

$7.3304

1500+

$7.2556

2000+

$7.1808

2500+

$7.106

Exquisite packaging

Discount

TT / Paypal / Credit Card / Western Union / Money Gram

HSEC8-130-01-S-DV-K-TR

$7.48

Product details

Samtec Inc.'s HSEC8-130-01-S-DV-K-TR delivers cutting-edge performance in Card Edge Connectors - Edgeboard Connectors for 5G infrastructure. Precision-engineered for RF signal integrity, this connector minimizes insertion loss while maximizing power handling capacity.The Non Specified - Dual Edge compatible design features impedance-matched transitions. The graduated dielectric constant maintains <1.2 VSWR up to 40GHz.The Female configuration includes RF shielding continuity. Multi-finger gaskets provide 360 shielding with <2m contact resistance at grounding points.With 30 contacts per bay, the layout optimizes RF performance. Ground-signal-ground arrangement minimizes crosstalk between adjacent channels.The 60 contact configuration supports massive MIMO arrays. Each contact path is individually tuned to maintain phase coherence across all channels.Compatible with 0.062" (1.57mm) cards, the connector features constant-impedance transitions. The tapered contact design prevents impedance discontinuities at card entry points.The 2 row arrangement incorporates resonant suppression. Quarter-wave stubs integrated into the housing prevent cavity resonances in 24-30GHz bands.The 0.031" (0.80mm) pitch design enables millimeter-wave operation. Electromagnetic simulations verify <-30dB coupling between adjacent contacts at 60GHz.Dual readout capability supports beamforming calibration. Integrated test ports allow vector network analyzer measurements without disassembly.The Surface Mount version includes thermal management features. The aluminum housing provides 5 C/W thermal resistance for power amplifier cooling.Solder process maintains RF performance. The solder joint geometry is optimized to minimize parasitic inductance (<0.5nH per contact).The Beryllium Copper contacts exhibit excellent high-frequency characteristics. Skin effect resistance is 30% lower than standard alloys at 28GHz.Gold plating provides stable RF performance. Surface roughness is controlled to <0.2 m RMS to minimize conductor loss at microwave frequencies.With 30.0µin (0.76µm) gold plating, the contacts achieve <0.1dB insertion loss per contact at 40GHz. This specification meets 5G fronthaul requirements.The Cantilever design includes controlled impedance transitions. The graduated contact shape maintains 50 characteristic impedance throughout the mating interface.The Black housing incorporates RF-absorbent material. This carbon-loaded polymer reduces surface wave propagation by 15dB at 60GHz.Rated for -55°C ~ 125°C, the connector uses low-dK materials. The dielectric constant varies less than 2% across the temperature range.