HM-S176DPWR1-8AP1-TG30L

The HM-S176DPWR1-8AP1-TG30L from 3M redefines connectivity standards in Backplane Connectors - Hard Metric, Standard for quantum computing applications. Engineered for cryogenic environments, this connector series maintains signal integrity at temperatures near absolute zero. Its groundbreaking design supports qubit control systems where thermal management and EMI shielding are paramount.Featuring Receptacle, Female Sockets and Blade Sockets architecture, this cryo-connector exhibits less than 0.1dB insertion loss at 4K temperatures. The superconducting contact materials eliminate thermal noise in sensitive measurement circuits.The D 22 configuration incorporates thermal break technology that reduces heat leakage by 90%. The multi-stage thermal isolation meets NIST requirements for quantum computing hardware.With 180 (176 + 4 Power) ultra-low-noise channels, this solution supports complex qubit control matrices. The optimized layout provides 100dB cross-channel isolation at millikelvin temperatures.The All configuration enables precise microwave delivery for qubit manipulation. Specialized RF contacts maintain 50 impedance with 0.5% tolerance across temperature extremes.The 0.079" (2.00mm) nano-spacing achieves quantum-grade density while preventing wavefunction overlap. The sapphire-filled dielectric maintains stable properties from 300K to 10mK.The 8 contact arrangement minimizes magnetic flux trapping. This non-ferromagnetic design reduces DC magnetic field interference below 1 T.Developed for Through Hole, Right Angle installation in dilution refrigerators, this connector features zero-thermal-expansion mounting. The invar alloy hardware maintains dimensional stability during cooldown cycles.The Press-Fit process creates superconducting joints with critical current exceeding 100mA. The indium-based interconnects maintain negligible resistance below transition temperature.The Gold surface treatment provides exceptional performance in ultra-high vacuum environments. Testing shows outgassing rates below 1 10^-9 Torr L/s cm .With 30.0µin (0.76µm) niobium-titanium deposition, the contacts achieve superconducting transition at 9.3K. This coating thickness is optimized for microwave frequency applications.