ERI8-031-S-D-RA

Samtec Inc.

General info

Part Number

ERI8-031-S-D-RA

Manufacturer

Samtec Inc.

Description:

CONN EDGE DUAL FMALE 62POS 0.031

Datasheet:

ERI8-031-S-D-RA PDF

Reference Price (USD)

$13.51000

500+

$13.3749

1000+

$13.2398

1500+

$13.1047

2000+

$12.9696

2500+

$12.8345

Exquisite packaging

Discount

TT / Paypal / Credit Card / Western Union / Money Gram

ERI8-031-S-D-RA

$13.51

Product details

Samtec Inc.'s ERI8-031-S-D-RA delivers cutting-edge performance in Card Edge Connectors - Edgeboard Connectors for 5G infrastructure. Precision-engineered for RF signal integrity, this connector minimizes insertion loss while maximizing power handling capacity.The Non Specified - Dual Edge compatible design features impedance-matched transitions. The graduated dielectric constant maintains <1.2 VSWR up to 40GHz.The Female configuration includes RF shielding continuity. Multi-finger gaskets provide 360 shielding with <2m contact resistance at grounding points.With 31 contacts per bay, the layout optimizes RF performance. Ground-signal-ground arrangement minimizes crosstalk between adjacent channels.The 62 contact configuration supports massive MIMO arrays. Each contact path is individually tuned to maintain phase coherence across all channels.The 2 row arrangement incorporates resonant suppression. Quarter-wave stubs integrated into the housing prevent cavity resonances in 24-30GHz bands.The 0.031" (0.80mm) pitch design enables millimeter-wave operation. Electromagnetic simulations verify <-30dB coupling between adjacent contacts at 60GHz.Dual readout capability supports beamforming calibration. Integrated test ports allow vector network analyzer measurements without disassembly.The Board Guide package includes integrated RFI filters. These -network filters provide 40dB rejection of out-of-band signals from 1MHz to 6GHz.The Surface Mount, Right Angle version includes thermal management features. The aluminum housing provides 5 C/W thermal resistance for power amplifier cooling.Solder process maintains RF performance. The solder joint geometry is optimized to minimize parasitic inductance (<0.5nH per contact).The Beryllium Copper contacts exhibit excellent high-frequency characteristics. Skin effect resistance is 30% lower than standard alloys at 28GHz.Gold plating provides stable RF performance. Surface roughness is controlled to <0.2 m RMS to minimize conductor loss at microwave frequencies.With 30.0µin (0.76µm) gold plating, the contacts achieve <0.1dB insertion loss per contact at 40GHz. This specification meets 5G fronthaul requirements.The Black housing incorporates RF-absorbent material. This carbon-loaded polymer reduces surface wave propagation by 15dB at 60GHz.Rated for -55°C ~ 125°C, the connector uses low-dK materials. The dielectric constant varies less than 2% across the temperature range.