DF1B-9S-2.5R
Hirose Electric Co Ltd
DF1B-9S-2.5R
Hirose Electric Co Ltd
CONN RCPT HSG 9POS 2.50MM
Reference Price (USD)
1+
$0.24000
500+
$0.2376
1000+
$0.2352
1500+
$0.2328
2000+
$0.2304
2500+
$0.228
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
DF1B-9S-2.5R
$0.24
Product details
Designed for IoT edge devices, Hirose Electric Co Ltd's DF1B-9S-2.5R revolutionizes Rectangular Connectors - Housings with ultra-low power consumption. Its innovative architecture enables seamless sensor integration while maintaining industry-leading energy efficiency.The Receptacle interface features patented contact geometry that reduces insertion force by 25% while maintaining 10Gbps data rates, ideal for battery-powered applications.Employing Female Socket technology, the connector achieves 0.2m contact resistance at just 10mA operating current, extending battery life in wearable electronics.With 9 micro-position contacts, this solution supports hybrid power/data transmission in space-constrained designs down to 3mm thickness.The 0.098" (2.50mm) ultra-fine pitch enables 40% size reduction versus standard connectors while maintaining 0.5A current rating per contact.The 1-row staggered arrangement optimizes signal integrity for high-impedance sensor inputs while minimizing crosstalk below -70dB.The Free Hanging (In-Line) variant incorporates self-aligning guides that enable blind mating with 0.5mm tolerance for field-replaceable modules.Crimp, IDC technology creates cold-welded joints stable across -55 C to +125 C, crucial for outdoor IoT deployments.The White housing uses 30% recycled materials while maintaining UL94 HB flammability rating for eco-conscious designs.
Product Attributes
- Product Status: Active
- Connector Type: Receptacle
- Contact Type: Female Socket
- Number of Positions: 9
- Pitch: 0.098" (2.50mm)
- Number of Rows: 1
- Row Spacing: -
- Mounting Type: Free Hanging (In-Line)
- Contact Termination: Crimp, IDC
- Fastening Type: -
- Color: White
- Features: -
You May Also Be Interested In
