8080-1G35
TE Connectivity AMP Connectors
8080-1G35
TE Connectivity AMP Connectors
CONN SOCKET TRANSIST TO-3 3POS
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Product details
TE Connectivity AMP Connectors's 8080-1G35 enables next-generation Sockets for ICs, Transistors solutions for quantum computing applications. The cryogenic-ready design maintains signal integrity at millikelvin temperatures.The Transistor, TO-3 architecture provides ultra-low thermal conductivity. Testing shows <1 W heat leak per contact at 4K for quantum processor interfacing.With 3 (Oval), the socket supports complex qubit control. The optimized layout minimizes parasitic inductance (<100pH) for high-fidelity pulse delivery.Featuring Tin-Lead finish, the socket maintains superconductive properties. Resistance measurements show <10^-8 contact resistance at 4.2K.The 200.0µin (5.08µm) coating ensures thermal matching. CTE measurements show <1ppm/K difference to silicon substrates.Constructed with Beryllium Copper, the socket minimizes magnetic susceptibility. SQUID measurements show <10^-8 emu/g at 4K.The Chassis Mount design facilitates dilution refrigerator integration. Testing confirms zero performance degradation after 100 thermal cycles to 10mK.Incorporating Closed Frame, the socket provides microwave shielding. Testing shows >60dB attenuation up to 40GHz for qubit protection.Solder technology ensures minimal thermal noise. Johnson noise measurements show <0.1nV/ Hz contribution at 4K.Tin-Lead plating prevents oxidation in ultra-high vacuum. XPS analysis shows <0.1nm oxide after 1000 hours at 10^-10 Torr.The 20.0µin (0.51µm) finish ensures reliable connections in vacuum. Testing shows no outgassing products detectable by RGA.The Beryllium Copper posts maintain mechanical properties at cryogenic temperatures. Testing shows <0.1% elastic modulus change from 300K to 4K.Diallyl Phthalate (DAP) housing material provides radiopure construction. Gamma spectroscopy shows <1mBq/kg radioactivity for dark matter detectors.Rated for -55°C ~ 125°C, the socket operates from room temperature to 10mK. Testing confirms <0.1% dimensional change during cooldown.
Product Attributes
- Product Status: Obsolete
- Type: Transistor, TO-3
- Number of Positions or Pins (Grid): 3 (Oval)
- Pitch - Mating: -
- Contact Finish - Mating: Tin-Lead
- Contact Finish Thickness - Mating: 200.0µin (5.08µm)
- Contact Material - Mating: Beryllium Copper
- Mounting Type: Chassis Mount
- Features: Closed Frame
- Termination: Solder
- Pitch - Post: -
- Contact Finish - Post: Tin-Lead
- Contact Finish Thickness - Post: 20.0µin (0.51µm)
- Contact Material - Post: Beryllium Copper
- Housing Material: Diallyl Phthalate (DAP)
- Operating Temperature: -55°C ~ 125°C
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