8080-1G3
TE Connectivity AMP Connectors
8080-1G3
TE Connectivity AMP Connectors
CONN SOCKET TRANSIST TO-3 3POS
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Product details
The 8080-1G3 from TE Connectivity AMP Connectors delivers laboratory-grade precision for Sockets for ICs, Transistors applications in test and measurement equipment. The ultra-stable design ensures <0.1% measurement uncertainty over 10,000 mating cycles.Featuring Transistor, TO-3 configuration, the socket provides 10^14 insulation resistance. Guarded measurements confirm <1pA leakage current at 1000V for sensitive instrumentation.With 3 (Oval), the socket supports high-precision metrology. The symmetrical layout minimizes thermocouple effects to <0.1 V/ C.The Tin-Lead finish provides stable thermoelectric properties. Testing confirms <0.5 V contact potential variation over temperature.200.0µin (5.08µm) thickness ensures long-term stability. Resistance measurements show <10ppm/year drift in controlled environments.Constructed with Beryllium Copper, the socket minimizes magnetic interference. Testing shows <0.1 T field distortion at 1mm distance.The Through Hole design prevents microphonic noise. Testing confirms <1 V vibration-induced noise in sensitive amplifier circuits.Incorporating Closed Frame, the socket provides Faraday cage shielding. Testing shows >100dB RF isolation up to 10GHz for precision measurements.Solder technology ensures negligible insertion loss. Network analyzer measurements show <0.01dB loss at 6GHz for RF test applications.Tin-Lead plating prevents surface oxidation. XPS analysis shows <1nm oxide growth after 1000 hours in cleanroom environments.The Beryllium Copper posts maintain dimensional stability. Interferometer measurements show <10nm flatness variation over temperature.Phenolic housing material provides ultra-low outgassing. RGA testing shows <1 10^-9 Torr total mass loss for vacuum applications.Rated for -55°C ~ 125°C, the socket ensures measurement stability. Testing confirms <1ppm/ C thermal EMF variation across the range.
Product Attributes
- Product Status: Obsolete
- Type: Transistor, TO-3
- Number of Positions or Pins (Grid): 3 (Oval)
- Pitch - Mating: -
- Contact Finish - Mating: Tin-Lead
- Contact Finish Thickness - Mating: 200.0µin (5.08µm)
- Contact Material - Mating: Beryllium Copper
- Mounting Type: Through Hole
- Features: Closed Frame
- Termination: Solder
- Pitch - Post: -
- Contact Finish - Post: Tin-Lead
- Contact Finish Thickness - Post: -
- Contact Material - Post: Beryllium Copper
- Housing Material: Phenolic
- Operating Temperature: -55°C ~ 125°C
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