63446-2

The 63446-2 by TE Connectivity AMP Connectors establishes new benchmarks in Terminals - Ring Connectors technology, crafted for ultra-high-speed data transmission systems. This cutting-edge connector integrates advanced signal integrity features with precision manufacturing for 5G infrastructure and data center applications.Featuring Oval architecture, this connector delivers exceptional impedance control. When analyzed in vector network analyzers, its geometry demonstrates <0.5dB insertion loss up to 40GHz.Optimized for 8 Stud interfaces, this terminal employs anti-resonant design principles. The patented contact configuration reduces skin effect losses by 35% at high frequencies.With 0.025" (0.64mm) dielectric spacing, this component achieves perfect impedance matching. The controlled thickness tolerance ( 2 m) ensures consistent performance across production batches.The 0.290" (7.37mm) dimension incorporates electromagnetic bandgap structures. These engineered features suppress common-mode noise by 20dB in mixed-signal environments.Precisely tuned to 0.500" (12.70mm), this connector minimizes signal reflections. The length-optimized design maintains rise time integrity for 28Gbps NRZ signals.The Free Hanging (In-Line) configuration enables seamless integration with PCB backplanes. The low-insertion-force design supports 10,000 mating cycles without performance degradation.Utilizing Crimp technology, this connector achieves <1 characteristic impedance. The ground-optimized termination scheme reduces ground bounce effects in high-speed digital systems.Compatible with 18-22 AWG coaxial cables, this terminal features constant-impedance transitions. The graduated impedance matching eliminates return loss spikes at connection points.The Non-Insulated system employs low-Dk materials for minimal signal distortion. Tested up to 100GHz, the dielectric properties remain stable across temperature extremes.Incorporating Serrated Termination, this connector delivers exceptional crosstalk immunity. The orthogonal pin-field arrangement achieves >60dB near-end crosstalk isolation.Fabricated from Brass, the contacts exhibit excellent high-frequency characteristics. The specialized alloy maintains stable contact resistance up to 125 C.The Tin plating provides ultra-low surface roughness. Surface profilometry measurements show Ra <0.1 m for optimal signal transmission.