32-3575-18
Aries Electronics
32-3575-18
Aries Electronics
CONN IC DIP SOCKET ZIF 32POS
Reference Price (USD)
1+
$141.20625
500+
$139.7941875
1000+
$138.382125
1500+
$136.9700625
2000+
$135.558
2500+
$134.1459375
Exquisite packaging
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32-3575-18
$141.21
Product details
Aries Electronics's 32-3575-18 enables next-generation Sockets for ICs, Transistors solutions for quantum computing applications. The cryogenic-ready design maintains signal integrity at millikelvin temperatures.The DIP, ZIF (ZIP), 0.3" (7.62mm) Row Spacing architecture provides ultra-low thermal conductivity. Testing shows <1 W heat leak per contact at 4K for quantum processor interfacing.With 32 (2 x 16), the socket supports complex qubit control. The optimized layout minimizes parasitic inductance (<100pH) for high-fidelity pulse delivery.0.100" (2.54mm) spacing prevents crosstalk in sensitive measurements. Testing shows <-80dB isolation at 10GHz for quantum state readout.Featuring Nickel Boron finish, the socket maintains superconductive properties. Resistance measurements show <10^-8 contact resistance at 4.2K.The 50.0µin (1.27µm) coating ensures thermal matching. CTE measurements show <1ppm/K difference to silicon substrates.Constructed with Beryllium Nickel, the socket minimizes magnetic susceptibility. SQUID measurements show <10^-8 emu/g at 4K.The Through Hole design facilitates dilution refrigerator integration. Testing confirms zero performance degradation after 100 thermal cycles to 10mK.Incorporating Closed Frame, the socket provides microwave shielding. Testing shows >60dB attenuation up to 40GHz for qubit protection.Solder technology ensures minimal thermal noise. Johnson noise measurements show <0.1nV/ Hz contribution at 4K.The 0.100" (2.54mm) spacing accommodates superconducting wiring. Critical current testing confirms >100mA per contact at 4.2K.Nickel Boron plating prevents oxidation in ultra-high vacuum. XPS analysis shows <0.1nm oxide after 1000 hours at 10^-10 Torr.The 50.0µin (1.27µm) finish ensures reliable connections in vacuum. Testing shows no outgassing products detectable by RGA.The Beryllium Nickel posts maintain mechanical properties at cryogenic temperatures. Testing shows <0.1% elastic modulus change from 300K to 4K.Polyphenylene Sulfide (PPS), Glass Filled housing material provides radiopure construction. Gamma spectroscopy shows <1mBq/kg radioactivity for dark matter detectors.
Product Attributes
- Product Status: Active
- Type: DIP, ZIF (ZIP), 0.3" (7.62mm) Row Spacing
- Number of Positions or Pins (Grid): 32 (2 x 16)
- Pitch - Mating: 0.100" (2.54mm)
- Contact Finish - Mating: Nickel Boron
- Contact Finish Thickness - Mating: 50.0µin (1.27µm)
- Contact Material - Mating: Beryllium Nickel
- Mounting Type: Through Hole
- Features: Closed Frame
- Termination: Solder
- Pitch - Post: 0.100" (2.54mm)
- Contact Finish - Post: Nickel Boron
- Contact Finish Thickness - Post: 50.0µin (1.27µm)
- Contact Material - Post: Beryllium Nickel
- Housing Material: Polyphenylene Sulfide (PPS), Glass Filled
- Operating Temperature: -
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