203-2737-55-1102
3M
203-2737-55-1102
3M
CONN TRANSIST TO-3/TO-66 3POS
Reference Price (USD)
1+
$44.28000
500+
$43.8372
1000+
$43.3944
1500+
$42.9516
2000+
$42.5088
2500+
$42.066
Exquisite packaging
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203-2737-55-1102
$44.28
Product details
The 203-2737-55-1102 from 3M delivers laboratory-grade precision for Sockets for ICs, Transistors applications in test and measurement equipment. The ultra-stable design ensures <0.1% measurement uncertainty over 10,000 mating cycles.Featuring Transistor, TO-3 and TO-66 configuration, the socket provides 10^14 insulation resistance. Guarded measurements confirm <1pA leakage current at 1000V for sensitive instrumentation.With 3 (Rectangular), the socket supports high-precision metrology. The symmetrical layout minimizes thermocouple effects to <0.1 V/ C.The Gold finish provides stable thermoelectric properties. Testing confirms <0.5 V contact potential variation over temperature.30.0µin (0.76µm) thickness ensures long-term stability. Resistance measurements show <10ppm/year drift in controlled environments.Constructed with Beryllium Copper, the socket minimizes magnetic interference. Testing shows <0.1 T field distortion at 1mm distance.The Through Hole design prevents microphonic noise. Testing confirms <1 V vibration-induced noise in sensitive amplifier circuits.Incorporating Closed Frame, the socket provides Faraday cage shielding. Testing shows >100dB RF isolation up to 10GHz for precision measurements.Solder technology ensures negligible insertion loss. Network analyzer measurements show <0.01dB loss at 6GHz for RF test applications.The 0.234" (5.94mm) spacing accommodates precision coaxial connections. Testing confirms <0.05mm positional accuracy for microwave probe stations.Gold plating prevents surface oxidation. XPS analysis shows <1nm oxide growth after 1000 hours in cleanroom environments.The 30.0µin (0.76µm) finish guarantees reproducible connections. Testing shows <0.01% contact resistance variation between mating cycles.The Beryllium Copper posts maintain dimensional stability. Interferometer measurements show <10nm flatness variation over temperature.Polyphenylene Sulfide (PPS), Glass Filled housing material provides ultra-low outgassing. RGA testing shows <1 10^-9 Torr total mass loss for vacuum applications.Rated for -55°C ~ 150°C, the socket ensures measurement stability. Testing confirms <1ppm/ C thermal EMF variation across the range.
Product Attributes
- Product Status: Active
- Type: Transistor, TO-3 and TO-66
- Number of Positions or Pins (Grid): 3 (Rectangular)
- Pitch - Mating: -
- Contact Finish - Mating: Gold
- Contact Finish Thickness - Mating: 30.0µin (0.76µm)
- Contact Material - Mating: Beryllium Copper
- Mounting Type: Through Hole
- Features: Closed Frame
- Termination: Solder
- Pitch - Post: 0.234" (5.94mm)
- Contact Finish - Post: Gold
- Contact Finish Thickness - Post: 30.0µin (0.76µm)
- Contact Material - Post: Beryllium Copper
- Housing Material: Polyphenylene Sulfide (PPS), Glass Filled
- Operating Temperature: -55°C ~ 150°C
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